s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t p - ch an n el m osf et 2s j603-zj f e a tu r e s v d s ( v ) = - 6 0 v i d = - 2 5 a r d s ( o n ) 4 8 m ( v g s = - 1 0 v ) r d s ( o n ) 7 5 m ( v g s = - 4 v ) l o w c i s s : c i s s = 1 9 0 0 p f ( t y p . ) source body diode gate protection diode gate drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s - 6 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d - 2 5 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m - 7 0 s i n g l e a v a l a n c h e c u r r e n t ( n o t e . 2 ) i a s - 2 5 5 0 1 . 5 s i n g l e a v a l a n c h e e n e r g y ( n o t e . 2 ) e a s 6 2 . 5 m j j u n c t i o n t e m p e r a t u r e t j 1 5 0 j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v p o w e r d i s s i p a t i o n p d w a n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % n o t e . 2 : s t a r t i n g t j = 2 5 c , v d d = - 3 0 v , r g = 2 5 , v g s = ? 2 0 v 0 t c = 2 5 t a = 2 5
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t t y p i c a l ch a r a c te r i s i ti c s p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 2 5 0 a , v g s = 0 v - 6 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = - 6 0 v , v g s = 0 v - 1 0 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 u a g a t e c u t o f f v o l t a g e v g s ( o f f ) v d s = - 1 0 v , i d = - 1 m a - 1 . 5 - 2 . 5 v v g s = - 1 0 v , i d = - 1 3 a 4 8 v g s = - 4 v , i d = - 1 3 a 7 5 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 1 0 v , i d = - 1 3 a 1 0 2 1 s i n p u t c a p a c i t a n c e c i ss 1 9 0 0 o u t p u t c a p a c i t a n c e c o ss 3 5 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 4 0 t o t a l g a t e c h a r g e q g 3 8 g a t e s o u r c e c h a r g e q g s 7 g a t e d r a i n c h a r g e q g d 1 0 t u r n - o n d e l a y t i m e t d ( o n ) 1 0 t u r n - o n r i s e t i m e t r 1 1 t u r n - o f f d e l a y t i m e t d ( o f f ) 6 6 t u r n - o f f f a l l t i m e t f 2 0 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 4 9 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 1 0 0 n c d i o d e f o r w a r d v o l t a g e v s d i f = - 2 5 a , v g s = 0 v - 1 v n s i f = - 2 5 a , v g s = 0 , d i / d t = 1 0 0 a / s p f s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) m v g s ( o n ) = - 1 0 v , v d s = - 3 0 v , i d = - 1 3 a , r g = 0 v g s = 0 v , v d s = - 1 0 v , f = 1 m h z v g s = - 1 0 v , v d s = - 4 8 v , i d = - 2 5 a n c t y p i c a l ch a r a c te r i s i ti c s single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a 1 10 100 1 m 10 m v dd = ?30 v r g = 25 v gs = ?20 0 v i as = ?25 a 10 100 0.1 e as = 62.5 mj single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 25 50 75 100 160 140 120 100 80 60 40 20 0 125 150 v dd = ?30 v r g = 25 v gs = ?20 0 v i as ?25 a p - ch an n el m osf et 2s j603-zj
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t t y p i c a l ch a r a c te r i s i ti c s drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m 50 0 50 100 150 i d = ?13 a 100 80 60 40 20 0 ?10 v v gs = ?4.0 v pulsed ?4.5v source to drain diode forward voltage ?1.0 i sd - diode forward current - a 0 ?1.5 v sd - source to drain voltage - v ?0.5 pulsed ?0.01 ?0.1 ?1 ?10 ?100 0 v v gs = ?10 v ?4.0 v capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 1 0 1 0 0 1 0 0 0 10 0 0 0 ?0.1 ?1 ?10 v gs = 0 v f = 1 mhz c oss c rss c iss ?100 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 ?1 ?0.1 100 1000 ?10 ?100 t f t r t d(on) t d(off) v dd = ?30 v v gs = ?10 v r g = 0 reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a / s v gs = 0 v 1 0.1 1 0 1 10 100 1000 1 0 0 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 10 15 5 20 25 30 35 40 ?60 ?50 ?40 ?30 ?20 ?10 0 v ds v dd = ?48 v ?30 v ?12 v i d = ?25 a ?12 ?10 ?8 ?6 ?4 ?2 0 v gs p - ch an n el m osf et 2s j603-zj
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . t y p i c a l ch a r a c te r i s i ti c s forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed ?1 ?2 ?3 ?4 ?5 v ds = ?10 v ?10 ?1 ?0.1 ?100 ?0.01 t a = 55?c 25?c 75?c 125?c drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 ?2 ?3 ?4 ?80 ?60 ?40 ?20 0 ?1 pulsed v gs = ?10 v ?5 ?4.0 v ?4.5 v forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s ?0.01 ?0.1 ?1 10 100 ?10 ?100 0.1 1 pulsed v ds = ?10 v t a = 125?c 75 ?c 25 ?c 55?c 0.01 drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 ?5 ?10 ?15 ?20 pulsed 100 80 60 40 20 0 i d = ?25 a ?5 a ?13 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ?1 ?0.1 120 100 80 60 40 20 0 ?10 ?100 pulsed v gs = ?4.0 v ?4.5 v ?10 v gate cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate cut-off voltage - v v ds = ?10 v i d = ?1 ma ?1.0 ?2.0 ?3.0 ?50 0 50 100 0 150 ?4.0 p - ch an n el m osf et 2s j603-zj
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t t y p i c a l ch a r a c te r i s i ti c s derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 0 40 20 60 100 140 80 120 160 100 80 60 40 20 0 t c - case temperature - ?c p t - total power dissipation - w 0 80 20 40 60 100 140 120 160 total power dissipation vs. case temperature 60 50 40 30 20 10 0 forward bias safe operating area i d - drain current - a v ds - drain to source voltage - v ?1 ?10 ?100 ?0.1 ?1 ?10 t c = 25?c single pulse ?0.1 ?100 power dissipation limited r ds(on) limited i d(dc) i d(pulse) pw = 10 s 100 s 1 ms 10 ms dc pw - pulse width - s transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c/ w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(j-c) = 2.5?c/ w r th(j-a) = 83.3?c/ w p - ch an n el m osf et 2s j603-zj
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